VISHAY IRFP360 Power MOSFET Installation Guide

VISHAY IRFP360 Power MOSFET

Product Information

• Product Name: IRFP360
• Manufacturer: Vishay Siliconix
• Product Type: Power MOSFET
• Package Type: D TO-247AC
• Configuration: N-Channel MOSFET
• Product Summary:

VDS (V)	RDS(on) (Ω)	Qg (max.) (nC)	Qgs (nC)	Qgd (nC)	Configuration
400 V	210 Ω	30 nC	110 nC	Single

Product Usage Instructions

To use the IRFP360 Power MOSFET, follow these instructions:

1. Make sure the product is properly connected to your circuit according to the datasheet.
2. Ensure that the drain-source voltage (VDS) does not exceed 400V.
3. Set the gate-source voltage (VGS) to 10V.
4. Keep the continuous drain current (ID) below 210A.
5. Avoid exceeding the maximum power dissipation (PD) of the product.
6. Follow the recommended soldering recommendations for peak temperature and mounting torque.
7. Take note of the thermal resistance ratings for proper heat dissipation.
8. Refer to the datasheet for detailed technical specifications and characteristics of the product.

FEATURES

• Dynamic dV/dt rated
•  Repetitive avalanche rated
• Isolated central mounting hole
•  Fast switching
•  Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
  Note 
  * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

• Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
• The TO-247AC package is preferred fo r commercial-industrial applications where higher powe r levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

PRODUCT SUMMARY

VDS (V)	400
RDS(on) (Ù)	VGS = 10 V	0.20
Qg (max.) (nC)	210
Qgs (nC)	30
Qgd (nC)	110
Configuration	Single

ORDERING INFORMATION

Package	TO-247AC
Lead (Pb)-free	IRFP360PbF

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C, unless otherwise noted)

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-source voltage			VDS	400	V
Gate-source voltage			VGS	± 20
Continuous drain current	VGS at 10 V	TC = 25 °C	ID	23	A
		TC = 100 °C		14
Pulsed drain currenta			IDM	92
Linear derating factor				2.2	W/°C
Single pulse avalanche energy b			EAS	1200	mJ
Repetitive avalanche current a			IAR	23	A
Repetitive avalanche energy a			EAR	28	mJ
Maximum power dissipation	TC = 25 °C		PD	280	W
Peak diode recovery dV/dt c			dV/dt	4.0	V/ns
Operating junction and storage temperature range			TJ, Tstg	-55 to +150	°C
Soldering recommendations (peak temperature)	for 10 s			300d
Mounting torque	6-32 or M3 screw			10	lbf · in
				1.1	N · m

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = 50 V, starting TJ = 25 °C, L = 4.0 mH, Rg = 25 Ω, IAS = 23 A (see fig. 12)
•  ISD ≤ 23 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum junction-to-ambient	RthJA	–	40	°C/W
Case-to-sink, flat, greased surface	RthCS	0.24	–
Maximum junction-to-case (drain)	RthJC	–	0.45

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
Static
Drain-source breakdown voltage	VDS	VGS = 0 V, ID = 250 μA		400	–	–	V
VDS temperature coefficient	ÄVDS/TJ	Reference to 25 °C, ID = 1 mA		–	0.56	–	V/°C
Gate-source threshold voltage	VGS(th)	VDS = VGS, ID = 250 μA		2.0	–	4.0	V
Gate-source leakage	IGSS	VGS = ± 20 V		–	–	± 100	nA
Zero gate voltage drain current	IDSS	VDS = 400 V, VGS = 0 V		–	–	25	μA
		VDS = 320 V, VGS = 0 V, TJ = 125 °C		–	–	250
Drain-source on-state resistance	RDS(on)	VGS = 10 V	ID = 14 A b	–	–	0.20	Ù
Forward transconductance	gfs	VDS = 50 V, ID = 14 A b		14	–	–	S
Dynamic
Input capacitance	Ciss	VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5		–	4500	–	pF
Output capacitance	Coss			–	1100	–
Reverse transfer capacitance	Crss			–	490	–
Total gate charge	Qg	VGS = 10 V	ID = 23 A, VDS = 320 V, see fig. 6 and 13 b	–	–	210	nC
Gate-source charge	Qgs			–	–	30
Gate-drain charge	Qgd			–	–	110
Turn-on delay time	td(on)	VDD = 200 V, ID = 23 A , Rg = 4.3 Ù, RD = 8.3 Ù, see fig. 10 b		–	18	–	ns
Rise time	tr			–	79	–
Turn-off delay time	td(off)			–	100	–
Fall time	tf			–	67	–
Internal drain inductance	LD	Between lead,                                D 6 mm (0.25″) from package and center of G die contact S		–	5.0	–	nH
Internal source inductance	LS			–	13	–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current	IS	MOSFET symbol                            D showing the integral reverse                    G p – n junction diode                         S		–	–	23	A
Pulsed diode forward current a	ISM			–	–	92
Body diode voltage	VSD	TJ = 25 °C, IS = 23 A, VGS = 0 V b		–	–	1.8	V
Body diode reverse recovery time	trr	TJ = 25 °C, IF = 23 A, dI/dt = 100 A/μs b		–	420	630	ns
Body diode reverse recovery charge	Qrr			–	5.6	8.4	μC
Forward turn-on time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

•  Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Package Information

VERSION 1: FACILITY CODE = 9

	MILLIMETERS
DIM.	MIN.	MAX.	NOTES
A	4.83	5.21
A1	2.29	2.55
A2	1.50	2.49
b	1.12	1.33
b1	1.12	1.28
b2	1.91	2.39	6
b3	1.91	2.34
b4	2.87	3.22	6, 8
b5	2.87	3.18
c	0.55	0.69	6
c1	0.55	0.65
D	20.40	20.70	4

	MILLIMETERS
DIM.	MIN.	MAX.	NOTES
D1	16.25	16.85	5
D2	0.56	0.76
E	15.50	15.87	4
E1	13.46	14.16	5
E2	4.52	5.49	3
e	5.44 BSC
L	14.90	15.40
L1	3.96	4.16	6
Ø P	3.56	3.65	7
Ø P1	7.19 ref.
Q	5.31	5.69
S	5.54	5.74

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at th e outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7.  Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8.  Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b 4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

	MILLIMETERS
DIM.	MIN.	MAX.	NOTES
A	4.58	5.31
A1	2.21	2.59
A2	1.17	2.49
b	0.99	1.40
b1	0.99	1.35
b2	1.53	2.39
b3	1.65	2.37
b4	2.42	3.43
b5	2.59	3.38
c	0.38	0.86
c1	0.38	0.76
D	19.71	20.82
D1	13.08	–

	MILLIMETERS
DIM.	MIN.	MAX.	NOTES
D2	0.51	1.30
E	15.29	15.87
E1	13.72	–
e	5.46 BSC
Ø k	0.254
L	14.20	16.25
L1	3.71	4.29
Ø P	3.51	3.66
Ø P1	–	7.39
Q	5.31	5.69
R	4.52	5.49
S	5.51 BSC

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
4.  Thermal pad contour optional with dimensions D1 and E1
5.  Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

	MILLIMETERS				MILLIMETERS
DIM.	MIN.	MAX.		DIM.	MIN.	MAX.
A	4.65	5.31		D2	0.51	1.35
A1	2.21	2.59		E	15.29	15.87
A2	1.17	1.37		E1	13.46	–
b	0.99	1.40		e	5.46 BSC
b1	0.99	1.35		k	0.254
b2	1.65	2.39		L	14.20	16.10
b3	1.65	2.34		L1	3.71	4.29
b4	2.59	3.43		N	7.62 BSC
b5	2.59	3.38		P	3.56	3.66
c	0.38	0.89		P1	–	7.39
c1	0.38	0.84		Q	5.31	5.69
D	19.71	20.70		R	4.52	5.49
D1	13.08	–		S	5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971

Notes

1.  Dimensioning and tolerancing per ASME Y14.5M-1994
2.  Contour of slot optional
3.  Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
4. ) Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

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